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| DC COMPONENTS CO., LTD. R MPSA44 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 400 400 6 300 625 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1 (1) Min 400 400 6 40 50 45 40 2% Typ - Max 0.1 0.5 0.1 0.35 0.35 0.75 0.75 300 6 Unit V V V A A A V V V V pF Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=400V, IE=0 VCE=400V, VBE=0 VEB=4V, IC=0 IC=1mA, IB=0.1mA IC=20mA, IB=2mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=1mA, VCE=10V IC=10mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V VCB=20V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat)2 VCE(sat)3 VBE(sat) hFE1 hFE2 hFE3 hFE4 Cob DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width 380s, Duty Cycle |
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